FDM3622 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
FDM3622 Key Features
- Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A
- Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A
- Low Miller Charge
- Low QRR Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb-Free, Halide Free and is RoHS pliant
- Continuous (Note 1a)
- Pulsed
- 55 to +150 °C