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FDM3622 - N-Channel MOSFET

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Datasheet Details

Part number FDM3622
Manufacturer onsemi
File Size 163.71 KB
Description N-Channel MOSFET
Datasheet download datasheet FDM3622 Datasheet

General Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

Overview

MOSFET – N-Channel, POWERTRENCH) 100 V, 4.4 A, 60 mW FDM3622 General.

Key Features

  • Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A.
  • Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • Optimized efficiency at high frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant MOSFET.

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