FDM3622
Description
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A
- Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A
- Low Miller Charge
- Low QRR Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- Continuous (Note 1a)
