FDM3622 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A
* Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A
* Low Miller Charge
* Low QRR Body Diode
* Optimized .
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
Features
* Max rDS(on) = 60 m.
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